发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFORE
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US15292842申请日： 2016-10-13
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公开(公告)号： US20170069614A1公开(公告)日： 2017-03-09
- 发明人: Masanori Onodera , Kouichi Meguro , Junji Tanaka
- 申请人： VALLEY DEVICE MANAGEMENT
- 主分类号： H01L25/00
- IPC分类号： H01L25/00 ; H01L21/56 ; H01L25/065 ; H01L23/31
摘要：
Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.
公开/授权文献
- US09837397B2 Non-volatile memory and devices that use the same 公开/授权日：2017-12-05
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