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公开(公告)号：US09041177B2
公开(公告)日：2015-05-26
申请号：US13711443
申请日：2012-12-11
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L21/44 , H01L25/065 , H01L21/56 , H01L21/683 , G06F1/18 , H01L23/31 , H01L23/66 , H01L25/18
CPC分类号： H01L25/50 , G06F1/183 , H01L21/56 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/66 , H01L24/11 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L25/18 , H01L2221/68331 , H01L2223/6677 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06568 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/4554
摘要： Various embodiments of the present invention include a semiconductor device, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device, in which downsizing and cost reduction can be realized.
摘要翻译： 本发明的各种实施例包括半导体器件，该半导体器件包括设置在衬底上的第一半导体芯片，密封第一半导体芯片的第一密封树脂，设置在第一密封树脂上的内置半导体器件，以及第二密封树脂 密封树脂密封第一密封树脂和内置半导体器件并覆盖基板的侧表面。 根据本发明的一个方面，可以提供能够实现小型化和降低成本的高质量的半导体器件。
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公开(公告)号：US09837397B2
公开(公告)日：2017-12-05
申请号：US15292842
申请日：2016-10-13
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L23/28 , H01L25/00 , H01L21/56 , H01L21/683 , H01L23/31 , H01L25/065 , G06F1/18 , H01L23/00 , H01L23/66 , H01L25/18
CPC分类号： H01L25/50 , G06F1/183 , H01L21/56 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/66 , H01L24/11 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L25/18 , H01L2221/68331 , H01L2223/6677 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06568 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/4554
摘要： Various embodiments of the present disclosure include a non-volatile memory semiconductor device and a device that uses the same, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present disclosure, it is possible to provide a high-quality semiconductor device, in which downsizing and cost reduction can be realized.
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公开(公告)号：US10347618B2
公开(公告)日：2019-07-09
申请号：US15819704
申请日：2017-11-21
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L25/065 , H01L25/00 , H01L21/56 , H01L21/683 , H01L23/31 , G06F1/18 , H01L23/00 , H01L23/66 , H01L25/18
摘要： Various embodiments of the present disclosure include a non-volatile memory semiconductor device and a device that uses the same, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present disclosure, it is possible to provide a high-quality semiconductor device, in which downsizing and cost reduction can be realized.
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公开(公告)号：US20180076188A1
公开(公告)日：2018-03-15
申请号：US15819704
申请日：2017-11-21
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L25/00 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/31 , H01L25/065 , G06F1/18 , H01L25/18 , H01L23/66
CPC分类号： H01L25/50 , G06F1/183 , H01L21/56 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/66 , H01L24/11 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L25/18 , H01L2221/68331 , H01L2223/6677 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06568 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/4554
摘要： Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.
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公开(公告)号：US20170069614A1
公开(公告)日：2017-03-09
申请号：US15292842
申请日：2016-10-13
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L25/00 , H01L21/56 , H01L25/065 , H01L23/31
CPC分类号： H01L25/50 , G06F1/183 , H01L21/56 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/66 , H01L24/11 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L25/18 , H01L2221/68331 , H01L2223/6677 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06568 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/4554
摘要： Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.
摘要翻译： 本发明的各种实施例包括半导体器件和制造方法，其中半导体器件包括设置在基片上的第一半导体芯片，密封第一半导体芯片的第一密封树脂，设置在第一密封件上的内置半导体器件 树脂和密封第一密封树脂和内置半导体器件并覆盖基板的侧表面的第二密封树脂。 根据本发明的一个方面，可以提供一种能够实现小型化和降低成本的高质量半导体器件和制造方法。
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公开(公告)号：US09472540B2
公开(公告)日：2016-10-18
申请号：US14716364
申请日：2015-05-19
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L23/28 , H01L25/00 , H01L21/56 , H01L21/683 , H01L25/065 , G06F1/18 , H01L23/00 , H01L23/31 , H01L23/66 , H01L25/18
CPC分类号： H01L25/50 , G06F1/183 , H01L21/56 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/66 , H01L24/11 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L25/18 , H01L2221/68331 , H01L2223/6677 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06568 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/4554
摘要： Various embodiments of the present invention include a method for making a semiconductor device the method including disposing a first semiconductor chip on a first surface of a first substrate, the first substrate comprising a second surface opposing the first surface, depositing a first resin above the first semiconductor chip, disposing a built-in semiconductor device on the first resin. The built-in semiconductor device including a second substrate, a second semiconductor chip disposed on the second substrate, and a second resin that seals the second semiconductor chip. The method including depositing a third resin above the built-in semiconductor device and the first resin and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device fabrication method, in which downsizing and cost reduction can be realized.
摘要翻译： 本发明的各种实施例包括一种制造半导体器件的方法，该方法包括在第一衬底的第一表面上设置第一半导体芯片，所述第一衬底包括与第一表面相对的第二表面，在第一衬底之上沉积第一树脂 半导体芯片，在第一树脂上设置内置半导体器件。 内置的半导体器件包括第二衬底，设置在第二衬底上的第二半导体芯片和密封第二半导体芯片的第二树脂。 该方法包括在内置半导体器件和第一树脂之上沉积第三树脂并覆盖第一衬底的侧表面，而不延伸超过第一衬底的第二表面。 根据本发明的一个方面，可以提供可以实现小型化和降低成本的高质量半导体器件制造方法。
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公开(公告)号：US20150255446A1
公开(公告)日：2015-09-10
申请号：US14716364
申请日：2015-05-19
发明人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
IPC分类号： H01L25/00 , H01L23/00 , H01L21/56 , H01L25/065
CPC分类号： H01L25/50 , G06F1/183 , H01L21/56 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/66 , H01L24/11 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L25/18 , H01L2221/68331 , H01L2223/6677 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06568 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/4554
摘要： Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.
摘要翻译： 本发明的各种实施例包括半导体器件和制造方法，其中半导体器件包括设置在基片上的第一半导体芯片，密封第一半导体芯片的第一密封树脂，设置在第一密封件上的内置半导体器件 树脂和密封第一密封树脂和内置半导体器件并覆盖基板的侧表面的第二密封树脂。 根据本发明的一个方面，可以提供一种能够实现小型化和降低成本的高质量半导体器件和制造方法。
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