Invention Application
- Patent Title: CMOS IMAGE SENSOR STRUCTURE WITH CROSSTALK IMPROVEMENT
- Patent Title (中): CMOS图像传感器结构与CROSSTALK改进
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Application No.: US14849311Application Date: 2015-09-09
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Publication No.: US20170069678A1Publication Date: 2017-03-09
- Inventor: Yun-Wei CHENG , Chun-Hao CHOU , Tsung-Han TSAI , Kuo-Cheng LEE , Volume CHIEN , Yung-Lung HSU
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.
Public/Granted literature
- US09761622B2 CMOS image sensor structure with crosstalk improvement Public/Granted day:2017-09-12
Information query
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