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    FLUORINE PASSIVATION IN A PIXEL SENSOR
    1.
    发明申请
    FLUORINE PASSIVATION IN A PIXEL SENSOR 有权

    公开(公告)号：US20240387574A1

    公开(公告)日：2024-11-21

    申请号：US18786821

    申请日：2024-07-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Lin CHEN ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146

    Abstract: Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.

    IMAGE SENSOR DEVICE
    2.
    发明申请
    IMAGE SENSOR DEVICE 有权

    公开(公告)号：US20220367549A1

    公开(公告)日：2022-11-17

    申请号：US17876878

    申请日：2022-07-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Feng-Chien HSIEH ,  Yun-Wei CHENG ,  Wei-Li HU ,  Kuo-Cheng LEE ,  Ying-Hao CHEN

    IPC: H01L27/146

    Abstract: An image sensor device includes a substrate, photosensitive pixels, an interconnect structure, a dielectric layer, and a light blocking element. The photosensitive pixels are in the substrate. The interconnect structure is over a first side of the substrate. The dielectric layer is over a second side of the substrate opposite the first side of the substrate. The light blocking element has a first portion extending over a top surface of the dielectric layer and a second portion extending in the dielectric layer. The second portion of the light blocking element laterally surrounds the photosensitive pixels.

    IMAGE SENSOR DEVICE AND METHOD OF FORMING THE SAME
    5.
    发明申请
    IMAGE SENSOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20190148450A1

    公开(公告)日：2019-05-16

    申请号：US15809458

    申请日：2017-11-10

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

    IPC: H01L27/146

    Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer and a trench isolation. The semiconductor substrate has a front side surface and a back side surface opposite to the front side surface. The radiation sensing member is disposed in a photosensitive region of the semiconductor substrate and extends from the front side surface of the semiconductor substrate. The radiation sensing member includes a semiconductor material with an optical band gap energy smaller than 1.77 eV. The device layer is over the front side surface of the semiconductor substrate and the radiation sensing member. The trench isolation is disposed in an isolation region of the semiconductor substrate and extends from the back side surface of the semiconductor substrate.

    ISOLATION STRUCTURE AND IMAGE SENSOR
    6.
    发明申请
    ISOLATION STRUCTURE AND IMAGE SENSOR 审中-公开

    公开(公告)号：US20190139998A1

    公开(公告)日：2019-05-09

    申请号：US16222649

    申请日：2018-12-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

    Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
    10.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号：US20150130002A1

    公开(公告)日：2015-05-14

    申请号：US14080611

    申请日：2013-11-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen HUANG

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

    Abstract translation: 提供一种图像传感器，包括基板，感光单元阵列，格栅，不透光层和多个滤色器。 在图像传感器中，栅格具有顶表面，并且不透光层设置在栅格的顶表面上。 由于栅格上的不透光层，入射到电网中的入射光可被遮光层阻挡，使得串扰效应显着降低。 此外，本文还提供了一种用于制造图像传感器的方法。

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