发明申请
US20170075210A1 MASK BLANK, METHOD OF MANUFACTURING PHASE SHIFT MASK, PHASE SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
有权
掩模布，制造相位移掩模的方法，相移屏蔽以及制造半导体器件的方法
- 专利标题： MASK BLANK, METHOD OF MANUFACTURING PHASE SHIFT MASK, PHASE SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 掩模布，制造相位移掩模的方法，相移屏蔽以及制造半导体器件的方法
-
申请号： US15122453申请日： 2015-02-24
-
公开(公告)号： US20170075210A1公开(公告)日： 2017-03-16
- 发明人: Hiroaki SHISHIDO , Osamu NOZAWA , Takashi UCHIDA
- 申请人： HOYA CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2014-069811 20140328
- 国际申请： PCT/JP2015/055125 WO 20150224
- 主分类号： G03F1/32
- IPC分类号： G03F1/32 ; H01L21/308 ; G03F7/20 ; G03F7/34 ; G03F1/80 ; G03F1/58
摘要：
A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.
公开/授权文献
信息查询
