Exposure mask and display device manufactured by using the same

    公开(公告)号:US11579493B2

    公开(公告)日:2023-02-14

    申请号:US16795425

    申请日:2020-02-19

    发明人: Dong Hee Shin

    摘要: A display device includes: a display area including a plurality of pixels; a first peripheral area disposed at one side of the display area; and a second peripheral area disposed at the opposite side of the display area, wherein a first column spacer is disposed in the display area, a second column spacer is disposed in the first peripheral area, and a third column spacer is disposed in the second peripheral area. The patterns of an exposure mask utilized in the first peripheral area in which the second column spacer is disposed and the second peripheral area in which the third column spacer is disposed may be different from each other.

    SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20220342293A1

    公开(公告)日:2022-10-27

    申请号:US17761100

    申请日:2020-09-23

    申请人: HOYA CORPORATION

    发明人: Masanori NAKAGAWA

    IPC分类号: G03F1/24 G03F1/76 G03F1/58

    摘要: Provided is a substrate with a multilayer reflective film, the substrate being used for manufacturing a reflective mask blank and a reflective mask each having a multilayer reflective film having a high reflectance to exposure light and a low background level during defect inspection.
    A substrate with a multilayer reflective film 110 comprises a substrate 1 and a multilayer reflective film 5. The multilayer reflective film 5 is formed of a multilayer film in which a low refractive index layer and a high refractive index layer are alternately layered on the substrate 1. The multilayer reflective film 5 comprises at least one additive element selected from hydrogen (H), deuterium (D), and helium (He). The additive element in the multilayer reflective film 5 has an atomic number density of 0.006 atom/nm3 or more and 0.50 atom/nm3 or less.

    Mask and manufacturing method thereof

    公开(公告)号:US11372325B2

    公开(公告)日:2022-06-28

    申请号:US16461372

    申请日:2018-10-23

    发明人: En-Tsung Cho

    IPC分类号: G03F1/58

    摘要: This application discloses a mask and a manufacture method thereof, including: a full shielding area, made of a light shielding material; a semi-transparent area, where there is at least one semi-transparent area and the semi-transparent area allows transmission of partial light, and a main body of the semi-transparent area is made of semi-transparent films, and full shielding structures are arranged in the semi-transparent films.

    Method for forming photomask and photolithography method

    公开(公告)号:US11307492B2

    公开(公告)日:2022-04-19

    申请号:US17101595

    申请日:2020-11-23

    摘要: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.

    RETICLE IN AN APPARATUS FOR EXTREME ULTRAVIOLET EXPOSURE

    公开(公告)号:US20210397076A1

    公开(公告)日:2021-12-23

    申请号:US17173245

    申请日:2021-02-11

    摘要: A reticle in an apparatus for extreme ultraviolet (EUV) exposure includes a substrate having an image area and a black border area surrounding the image area, a multi-layer structure on the image area and the black border area of the substrate, the multi-layer structure to reflect EUV light, a capping layer covering the multi-layer structure, first absorber layer patterns on the capping layer in the image area and the black border area, and an absorber structure on the capping layer in the black border area, the absorber structure including one of the first absorber layer patterns, a hard mask pattern, and a second absorber layer pattern sequentially stacked, the absorber structure covering an entire upper surface of the capping layer in the black border area.

    Extreme ultraviolet mask with reduced mask shadowing effect and method of manufacturing the same

    公开(公告)号:US11086215B2

    公开(公告)日:2021-08-10

    申请号:US16019754

    申请日:2018-06-27

    摘要: A reticle and a method for manufacturing a reticle are provided. The method includes forming a reflective multilayer (ML) over a front-side surface of a mask substrate. The method further includes forming a capping layer over the reflective ML. The method further includes forming a sacrificial multilayer over the capping layer. The method further includes forming an opening in the sacrificial multilayer to expose the capping layer. The method further includes forming a first absorption layer over the sacrificial multilayer and covering the capping layer in the opening. The method further includes removing the first absorption layer outside the opening in the sacrificial multilayer to form a first absorption pattern on a portion of the capping layer.