Invention Application
US20170076802A1 Programming of Nonvolatile Memory with Verify Level Dependent on Memory State and Programming Loop Count 审中-公开
根据存储器状态和编程循环计数验证电平的非易失性存储器的编程

  • Patent Title: Programming of Nonvolatile Memory with Verify Level Dependent on Memory State and Programming Loop Count
  • Patent Title (中): 根据存储器状态和编程循环计数验证电平的非易失性存储器的编程
  • Application No.: US14853733
    Application Date: 2015-09-14
  • Publication No.: US20170076802A1
    Publication Date: 2017-03-16
  • Inventor: Nima Mokhlesi
  • Applicant: SanDisk Technologies, LLC.
  • Main IPC: G11C16/14
  • IPC: G11C16/14 G11C16/28 G11C16/34
Programming of Nonvolatile Memory with Verify Level Dependent on Memory State and Programming Loop Count
Abstract:
A series of programming pulses, where the individual pulses are identified by a pulse number, is used to program a page of memory cells in parallel. After receiving a pulse, the memory cells under verification are verified to determine if they have been programmed to their respective target states. The memory cells that have been verified are inhibited from further programming while those memory cells not verified will be further programmed by subsequent programming pulses. The pulsing, verification and inhibition continue until all memory cells of the page have been program-verified. Each verify level used in the verification is a function of both the target state and the pulse number. This allows adjustment of the verify level to compensate for changes in sensing, including those due to variation in source line loading during the course of programming.
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