Invention Application
- Patent Title: METHOD OF FABRICATING A TRANSISTOR CHANNEL STRUCTURE WITH UNIAXIAL STRAIN
- Patent Title (中): 用不均匀应变制造晶体管通道结构的方法
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Application No.: US15261226Application Date: 2016-09-09
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Publication No.: US20170076997A1Publication Date: 2017-03-16
- Inventor: Shay REBOH , Laurent GRENOUILLET , Frederic MILESI , Yves MORAND , Francois RIEUTORD
- Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat a L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Priority: FR1558477 20150911
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/265 ; H01L21/762 ; H01L29/08 ; H01L29/66 ; H01L29/78 ; H01L21/266 ; H01L21/02
Abstract:
Method for creation of stressed channel structure transistors wherein at least one amorphising ion implantation of the surface layer of a substrate of the semiconductor-on-insulator type is carried out through openings in a mask, so as to render zones of the surface layers amorphous and to induce relaxation of a zone intended to form a channel and located between the zones that have been rendered amorphous, the relaxation being carried out in a direction orthogonal to that in which it is intended that the channel current flows.
Public/Granted literature
- US09935019B2 Method of fabricating a transistor channel structure with uniaxial strain Public/Granted day:2018-04-03
Information query
IPC分类:
