发明申请
- 专利标题： METHOD OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR
- 专利标题（中）： 形成高电子移动晶体管的方法
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申请号： US15362465申请日： 2016-11-28
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公开(公告)号： US20170077255A1公开(公告)日： 2017-03-16
- 发明人: Fu-Wei YAO , Chen-Ju YU , King-Yuen WONG , Chun-Wei HSU , Jiun-Lei Jerry YU , Fu-Chih YANG , Chun-Lin TSAI
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/20 ; H01L21/285 ; H01L29/66 ; H01L21/02 ; H01L29/778 ; H01L29/205
摘要：
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the salicide source feature and the salicide drain feature.
公开/授权文献
- US09985103B2 Method of forming high electron mobility transistor 公开/授权日：2018-05-29