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    SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
    3.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME 有权
    半导体结构及其形成方法

    公开(公告)号：US20160049505A1

    公开(公告)日：2016-02-18

    申请号：US14926783

    申请日：2015-10-29

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： King-Yuen WONG ,  Chen-Ju YU ,  Fu-Wei YAO ,  Chun-Wei HSU ,  Jiun-Lei Jerry YU ,  Chih-Wen HSIUNG ,  Fu-Chih YANG

    IPC分类号： H01L29/778 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

    CPC分类号： H01L29/7786 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7787

    摘要： A method of forming a semiconductor structure includes growing a second III-V compound layer over a first III-V compound layer, wherein the second III-V compound layer has a different band gap from the first III-V compound layer. The method further includes forming a source feature and a drain feature over the second III-V compound layer. The method further includes forming a gate dielectric layer over the second III-V compound layer, the source feature and the drain feature. The method further includes implanting at least one fluorine-containing compound into a portion of the gate dielectric layer. The method further includes forming a gate electrode over the portion of the gate dielectric layer.

    摘要翻译： 形成半导体结构的方法包括在第一III-V化合物层上生长第二III-V化合物层，其中第二III-V化合物层与第一III-V化合物层具有不同的带隙。 该方法还包括在第二III-V复合层上形成源特征和漏极特征。 该方法还包括在第二III-V化合物层上形成栅介质层，源特征和漏极特征。 该方法还包括将至少一种含氟化合物注入到栅介质层的一部分中。 该方法还包括在栅介电层的一部分上形成栅电极。

    INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS
    8.
    发明申请
    INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS 有权
    集成电路和形成集成电路的方法

    公开(公告)号：US20160284845A1

    公开(公告)日：2016-09-29

    申请号：US15171322

    申请日：2016-06-02

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Chun Hsiung TSAI ,  Su-Hao LIU ,  Chien-Tai CHAN ,  King-Yuen WONG ,  Chien-Chang SU

    IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265 ,  H01L29/08

    CPC分类号： H01L29/7834 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/6653 ,  H01L29/66636

    摘要： An integrated circuit includes a gate electrode and spacers along sidewalls of the gate electrode. The integrated circuit further includes a source/drain (S/D) region adjacent to the gate electrode. The S/D region includes a diffusion barrier structure at least partially in a recess of the substrate. The diffusion barrier structure includes an epitaxial layer having a first region and a second region. The first region is thinner than the second region, and the first region is misaligned with respect to the sidewalls of the gate electrode. The S/D region includes a doped silicon-containing structure over the diffusion barrier structure. The first region of the diffusion barrier structure is configured to partially prevent dopants of the doped silicon-containing structure from diffusing into the substrate. The second region of the diffusion barrier structure is configured to substantially completely prevent the dopants of the doped silicon-containing structure from diffusing into the substrate.

    摘要翻译： 集成电路包括栅电极和沿着栅电极的侧壁的间隔物。 集成电路还包括与栅电极相邻的源极/漏极（S / D）区域。 S / D区域至少部分地包括在衬底的凹部中的扩散阻挡结构。 扩散阻挡结构包括具有第一区域和第二区域的外延层。 第一区域比第二区域薄，第一区域相对于栅电极的侧壁不对准。 S / D区域包括在扩散阻挡结构上的掺杂的含硅结构。 扩散阻挡结构的第一区域被配置为部分地防止掺杂的含硅结构的掺杂剂扩散到衬底中。 扩散阻挡结构的第二区域被配置为基本上完全防止掺杂的含硅结构的掺杂剂扩散到衬底中。

    CIRCUIT STRUCTURE, TRANSISTOR AND SEMICONDUCTOR DEVICE
    9.
    发明申请
    CIRCUIT STRUCTURE, TRANSISTOR AND SEMICONDUCTOR DEVICE 有权
    电路结构，晶体管和半导体器件

    公开(公告)号：US20150357453A1

    公开(公告)日：2015-12-10

    申请号：US14827839

    申请日：2015-08-17

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Jiun-Lei Jerry YU ,  Fu-Wei YAO ,  Chen-Ju YU ,  Chun-Wei HSU ,  King-Yuen WONG

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20

    CPC分类号： H01L29/66462 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/452 ,  H01L29/778 ,  H01L29/7787

    摘要： A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1−x)N (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.

    摘要翻译： 电路结构包括衬底，衬底上的III-V半导体化合物，III-V半导体化合物上的Al x Ga（1-x）N（AlGaN）层，AlGaN层上的栅极，栅极上的钝化膜 并且在源极结构的栅极的相对侧上的AlGaN层的一部分，源极结构和漏极结构，其中X的范围为0.1至1.源极结构具有源极接触部分和顶部部分。 顶部部分在源极接触部分和栅极之间的钝化膜的至少一部分之上。 源极接触部分和栅极之间的距离小于栅极和漏极结构之间的距离。