Invention Application
US20170077307A1 OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, MANUFACTURING METHOD AND DEVICE
有权
氧化物半导体薄膜，薄膜晶体管，制造方法和器件
- Patent Title: OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, MANUFACTURING METHOD AND DEVICE
- Patent Title (中): 氧化物半导体薄膜，薄膜晶体管，制造方法和器件
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Application No.: US15123177Application Date: 2015-09-02
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Publication No.: US20170077307A1Publication Date: 2017-03-16
- Inventor: Guangcai YUAN , Liangchen YAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Applicant Address: CN Beijing CN Guangzhou, Guangdong
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Current Assignee Address: CN Beijing CN Guangzhou, Guangdong
- Priority: CN201510220082.5 20150430
- International Application: PCT/CN2015/088853 WO 20150902
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/24
Abstract:
This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
Public/Granted literature
- US09917205B2 Oxide semiconductor thin film, thin film transistor, manufacturing method and device Public/Granted day:2018-03-13
Information query
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