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公开(公告)号：US20180315777A1
公开(公告)日：2018-11-01
申请号：US15508484
申请日：2016-05-20
Inventor： Liangchen YAN , Guangcai YUAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L27/12 , H01L29/423 , H01L29/417 , H01L29/786 , H01L29/66
CPC classification number: H01L29/7869 , H01L29/66969
Abstract: A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO2. This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO2 is about 1%-95%. A semiconductor layer comprising Sn-doped ZrO2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO2, and (ii) annealing the semiconductor layer.
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2.发明申请OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, MANUFACTURING METHOD AND DEVICE 有权氧化物半导体薄膜，薄膜晶体管，制造方法和器件公开(公告)号：US20170077307A1
公开(公告)日：2017-03-16
申请号：US15123177
申请日：2015-09-02
Inventor： Guangcai YUAN , Liangchen YAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L29/786 , H01L27/12 , H01L29/24
CPC classification number: H01L29/7869 , H01L21/02 , H01L21/02189 , H01L21/02194 , H01L21/02565 , H01L21/34 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78696
Abstract: This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
Abstract translation: 本公开公开了属于平板显示器领域的氧化物半导体薄膜，薄膜晶体管，制造方法和装置。 氧化物半导体薄膜由含有锆和铟的氧化物制成。 制造氧化物半导体薄膜的方法包括使用含有锆和铟的氧化物制备靶，溅射靶以获得氧化物半导体薄膜。
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公开(公告)号：US20180090601A1
公开(公告)日：2018-03-29
申请号：US15515004
申请日：2016-05-11
Inventor： Liangchen YAN , Guangcai YUAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L29/66 , H01L21/443 , H01L21/02 , H01L29/24 , H01L29/49 , H01L29/786 , C23C14/18 , C23C14/20 , C23C14/58 , C25D11/26 , C25D11/34 , C25D11/04 , C25D11/02
Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.
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4.发明申请公开(公告)号：US20180061990A1
公开(公告)日：2018-03-01
申请号：US15534415
申请日：2016-12-29
Inventor： Liangchen YAN , Guangcai YUAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L29/786 , H01L29/49 , H01L29/66 , H01L21/34 , H01L27/12
Abstract: The present disclosure provides an active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof. A method for fabricating an active layer in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer. The thin film is made of a material selected to provide the active layer with a carrier concentration of at least approximately 1×1017 cm−3 and a carrier mobility of at least approximately 20 cm2/Vs.
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公开(公告)号：US20170141193A1
公开(公告)日：2017-05-18
申请号：US15303231
申请日：2015-10-09
Inventor： Guangcai YUAN , Liangchen YAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L29/24 , H01L27/12 , H01L29/786 , H01L29/66 , H01L21/02
CPC classification number: H01L29/24 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78681 , H01L29/7869 , H01L29/78696
Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20190067609A1
公开(公告)日：2019-02-28
申请号：US15765262
申请日：2017-09-18
Inventor： Liangchen YAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L51/05
Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.
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7.发明申请公开(公告)号：US20180138210A1
公开(公告)日：2018-05-17
申请号：US15303357
申请日：2016-01-13
Inventor： Guangcai YUAN , Liangchen YAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L27/12 , H01L27/15 , G02F1/1335 , H01L33/00
CPC classification number: H01L27/1218 , G02F1/133603 , H01L27/12 , H01L27/1222 , H01L27/156 , H01L29/786 , H01L33/005
Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.
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8.发明申请ENERGY BALANCE CONTROLLER OF ELECTRONIC POWER CONVERTER AND ENERGY BALANCE CONTROL METHOD 有权电能转换器和能量平衡控制方法的能量平衡控制器公开(公告)号：US20160254739A1
公开(公告)日：2016-09-01
申请号：US15030191
申请日：2013-12-23
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Qinghua WU , Lei WANG
IPC: H02M1/00
CPC classification number: H02M1/00 , H02M3/156 , H02M3/1563 , H02M3/157 , H02M2001/0009 , H02M2003/1566
Abstract: An energy balance controller includes a detection unit, a calculation unit and a reset integral module; the reset integral module includes a reset integrator, a comparator and an RS flip-flop; the input terminals of the calculation unit and the reset integrator are connected to the output terminal of the detection unit, respectively; the output terminal of the calculation unit is connected to one input terminal of the comparator, and the output terminal of the reset integrator is connected to the other input terminal of the comparator; the output terminal of the comparator is connected to the reset terminal of the RS flip-flop; the Q terminal of the RS flip-flop is connected to the reset integrator, and the Q terminal of the RS flip-flop is used for controlling a switching device of the converter to switch on or off; the method is implemented by the energy balance controller.
Abstract translation: 能量平衡控制器包括检测单元，计算单元和复位积分模块; 复位积分模块包括复位积分器，比较器和RS触发器; 计算单元的输入端和复位积分器分别连接到检测单元的输出端子; 计算单元的输出端连接到比较器的一个输入端，复位积分器的输出端连接到比较器的另一个输入端; 比较器的输出端连接到RS触发器的复位端; RS触发器的Q端连接到复位积分器，RS触发器的Q端用于控制转换器的开关器件接通或断开; 该方法由能量平衡控制器实现。
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9.发明申请公开(公告)号：US20210083124A1
公开(公告)日：2021-03-18
申请号：US16678116
申请日：2019-11-08
Applicant: South China University of Technology
Inventor： Miao XU , Hua XU , Weijing WU , Weifeng CHEN , Lei WANG , Junbiao PENG
IPC: H01L29/786 , H01L29/24 , H01L29/423 , H01L29/66
Abstract: The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.
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10.发明申请公开(公告)号：US20210083125A1
公开(公告)日：2021-03-18
申请号：US16678173
申请日：2019-11-08
Applicant: South China University of Technology
Inventor： Miao XU , Hua XU , Weijing WU , Weifeng CHEN , Lei WANG , Junbiao PENG
IPC: H01L29/786 , H01L29/24 , H01L29/66
Abstract: The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.
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