An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.