公开(公告)号：US20170054930A1

公开(公告)日：2017-02-23

申请号：US15230727

申请日：2016-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuro OHMARU ,  Naoto KUSUMOTO ,  Kentaro HAYASHI

IPC: H04N5/374 ,  H01L27/146 ,  H04N5/351 ,  H04N5/369 ,  H04N5/357

CPC classification number: H01L27/14605 ,  H01L27/14609 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14696 ,  H04N5/23245 ,  H04N5/347 ,  H04N5/3696 ,  H04N5/37457

Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

Abstract translation: 提供低功耗的成像装置。 成像装置的像素包括第一和第二光电转换元件以及第一至第五晶体管。 第一光电转换元件的阴极与第一晶体管电连接。 第二光电转换元件的阳极电连接到第二晶体管。 使用第一光电转换元件获得参考帧的成像数据，然后使用第二光电转换元件获得差分检测帧的成像数据。 在获得差分检测帧的成像数据之后，比较作为从像素输出的信号的电位的第一电位和作为参考电位的第二电位的第一电位。 使用第一电位和第二电位来确定参考帧的成像数据和差异检测帧的成像数据之间是否存在差异。

公开(公告)号：US20150380450A1

公开(公告)日：2015-12-31

申请号：US14746926

申请日：2015-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki OKAMOTO ,  Yoshiyuki KUROKAWA ,  Hiroki INOUE ,  Takuro OHMARU

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/0272 ,  H01L29/786

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14643 ,  H01L29/7869 ,  H01L31/0272 ,  H01L31/105

Abstract: An imaging device with high productivity and improved dynamic range is provided. The imaging device includes a pixel driver circuit and a photoelectric conversion element including a p-type semiconductor, an n-type semiconductor, and an i-type semiconductor. In a plan view, the total area of a part of the i-type semiconductor overlapped with neither a metal material nor a semiconductor material constituting the pixel driver circuit is preferably greater than or equal to 65%, more preferably greater than or equal to 80%, and still more preferably greater than or equal to 90% of the area of the whole i-type semiconductor. Plural photoelectric conversion elements are provided in the same semiconductor, whereby a process for separating the photoelectric conversion elements can be omitted. The i-type semiconductors in the plural photoelectric conversion elements are separated from each other by the p-type semiconductor or the n-type semiconductor.

Abstract translation: 提供了具有高生产率和改进的动态范围的成像装置。 该成像装置包括像素驱动电路和包括p型半导体，n型半导体和i型半导体的光电转换元件。 在平面图中，与构成像素驱动电路的金属材料和半导体材料不重叠的i型半导体的一部分的总面积优选为65％以上，更优选为80以上 ％，还更优选大于或等于整个i型半导体的面积的90％。 多个光电转换元件设置在相同的半导体中，由此可以省略用于分离光电转换元件的处理。 多个光电转换元件中的i型半导体通过p型半导体或n型半导体彼此分离。

公开(公告)号：US20150179806A1

公开(公告)日：2015-06-25

申请号：US14636611

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiichi YONEDA ,  Takuro OHMARU

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L27/1251 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/045 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor.

Abstract translation: 半导体器件包括：第一晶体管，其包括在其氧化物半导体层下方的第一栅极电极和位于其氧化物半导体层上方的第二栅电极;以及第二晶体管，其在其氧化物半导体层上方包括第一栅极电极和第二栅电极， 其氧化物半导体层被设置成至少部分地与第一晶体管重叠。 在半导体器件中，用作第一晶体管的第二栅电极的导电膜和第二晶体管的第二栅电极在第一晶体管和第二晶体管之间共用。 注意，第二栅电极不仅控制第一晶体管和第二晶体管的阈值电压（Vth），而且还具有减小从第一晶体管和第二晶体管的各个第一栅电极施加的电场的干扰的效果。

公开(公告)号：US20130161607A1

公开(公告)日：2013-06-27

申请号：US13716924

申请日：2012-12-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi YONEDA ,  Takuro OHMARU

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/0688 ,  H01L27/108 ,  H01L27/10873 ,  H01L27/1225 ,  H01L28/60

Abstract: A semiconductor device with high productivity and high yield is provided. The semiconductor device includes a word line, a capacitor line, a first bit line, a second bit line, and a first transistor and a second transistor each of which includes a gate, a source, and a drain. The first transistor and the second transistor at least partly overlap with each other, and the gates of the first transistor and the second transistor are connected to the word line. A capacitor is formed between at least part of the capacitor line and each of the drains of the first transistor and the second transistor. The first bit line is connected to the source of the first transistor, and the second bit line is connected to the source of the second transistor.

Abstract translation: 提供了高生产率和高产量的半导体器件。 半导体器件包括字线，电容线，第一位线，第二位线，以及包括栅极，源极和漏极的第一晶体管和第二晶体管。 第一晶体管和第二晶体管彼此至少部分重叠，并且第一晶体管和第二晶体管的栅极连接到字线。 电容器形成在电容器线的至少一部分与第一晶体管和第二晶体管的漏极中的每一个之间。 第一位线连接到第一晶体管的源极，第二位线连接到第二晶体管的源极。

公开(公告)号：US20130140569A1

公开(公告)日：2013-06-06

申请号：US13683029

申请日：2012-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiichi YONEDA ,  Takuro OHMARU

IPC: H01L29/78

CPC classification number: H01L27/1251 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/045 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor.

公开(公告)号：US20240015381A1

公开(公告)日：2024-01-11

申请号：US18369249

申请日：2023-09-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuro OHMARU

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14612

Abstract: Provided is a novel semiconductor device, a semiconductor device with reduced area, or a versatile semiconductor device. The semiconductor device includes a pixel portion including a first pixel, a second pixel, a third pixel, and a fourth pixel; a first switch and a second switch located outside the first to fourth pixels; a first wiring located outside the first to fourth pixels; a second wiring electrically connected to the first and second pixels; and a third wiring electrically connected to the third and fourth pixels. A first terminal of the first switch is electrically connected to the first wiring. A second terminal of the first switch is electrically connected to the second wiring. A first terminal of the second switch is electrically connected to the first wiring. A second terminal of the second switch is electrically connected to the third wiring.

公开(公告)号：US20170084649A1

公开(公告)日：2017-03-23

申请号：US15258114

申请日：2016-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuro OHMARU ,  Naoto KUSUMOTO

IPC: H01L27/146 ,  H04N5/225 ,  H04N5/378 ,  H01L31/0272

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/0272 ,  H04N5/2253 ,  H04N5/32 ,  H04N5/3532 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

公开(公告)号：US20170039970A1

公开(公告)日：2017-02-09

申请号：US15299515

申请日：2016-10-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuji NISHIJIMA ,  Seiichi YONEDA ,  Takuro OHMARU ,  Jun KOYAMA

IPC: G09G3/36 ,  H01L29/24 ,  G09G5/395 ,  H01L27/105 ,  G09G5/393 ,  H01L29/786 ,  H01L27/12

CPC classification number: G09G3/3648 ,  G02F2001/136295 ,  G09G3/3614 ,  G09G3/3677 ,  G09G5/393 ,  G09G5/395 ,  G09G2300/0842 ,  G09G2310/0264 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2360/121 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/16

Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.

Abstract translation: 在静止图像显示在具有像素的像素部分的情况下，例如通过停止对驱动电路的电源电压的供给来停止将具有图像数据的图像信号写入到像素部分的驱动电路， 并且停止向像素部分写入图像信号。 在驱动器电路停止之后，停止向用于控制驱动器电路的操作的面板控制器的电源电压供给和用于存储图像数据的图像存储器，并且向CPU提供电源电压以集中地控制 停止面板控制器，图像存储器和用于控制对半导体显示装置中的各种电路的电源电压供给的电源控制器。

公开(公告)号：US20170025456A1

公开(公告)日：2017-01-26

申请号：US15211113

申请日：2016-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuro OHMARU

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H01L29/786 ,  H01L31/0272

CPC classification number: H01L27/14616 ,  H01L27/14607 ,  H01L27/14618 ,  H01L27/14625 ,  H01L29/7869 ,  H01L31/0272 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/181 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/378 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An imaging device capable of obtaining high-quality imaging data is provided. The imaging device can correct variation in the threshold voltage of amplifier transistors included in pixel circuits. The amplifier transistor includes two gates facing each other with a channel formation region provided therebetween. The amplifier transistor operates in such a manner that one of the gates holds a potential for correcting variation in the threshold voltage and the other thereof is supplied with a potential corresponding to imaging data.

Abstract translation: 提供能够获得高质量成像数据的成像装置。 成像装置可以校正包括在像素电路中的放大器晶体管的阈值电压的变化。 放大器晶体管包括彼此面对的两个栅极，其间设置有沟道形成区域。 放大器晶体管以这样的方式工作，使得一个栅极保持用于校正阈值电压的变化的电位，并且另一个被提供与成像数据相对应的电位。

公开(公告)号：US20170018587A1

公开(公告)日：2017-01-19

申请号：US15206695

申请日：2016-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuro OHMARU

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/355

CPC classification number: H01L27/14612 ,  H01L27/14607 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14663 ,  H01L27/14665 ,  H01L27/14689 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15311 ,  H04N5/23245 ,  H04N5/3532 ,  H04N5/355 ,  H04N5/3559 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3745 ,  H01L2924/00014

Abstract: An imaging device whose dynamic range is broadened is provided. The imaging device includes a pixel including a first photoelectric conversion element and a first circuit including a second photoelectric conversion element. The first circuit switches the operation mode of the pixel to a normal imaging mode or a wide dynamic range mode and switches the operation region of the first photoelectric conversion element to a normal region or an avalanche region in accordance with the illuminance of light with which the second photoelectric conversion element is irradiated. When the illuminance of light with which the first photoelectric conversion element is irradiated is increased, the increase rate of a writing current flowing to the pixel is higher in the avalanche region than in the normal region. However, in the wide dynamic range mode, the increase rate of current can be lowered, and thus the dynamic range can be broadened.

Abstract translation: 提供动态范围扩大的成像装置。 成像装置包括包括第一光电转换元件和包括第二光电转换元件的第一电路的像素。 第一电路将像素的操作模式切换到正常成像模式或宽动态范围模式，并且根据光的照度将第一光电转换元件的操作区域切换到正常区域或雪崩区域， 照射第二光电转换元件。 当照射第一光电转换元件的光的照度增加时，在雪崩区域中流过像素的写入电流的增加速度高于正常区域。 然而，在宽动态范围模式下，可以降低电流的增加率，从而可以扩大动态范围。