- 专利标题： DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
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申请号： US15348507申请日： 2016-11-10
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公开(公告)号： US20170084702A1公开(公告)日： 2017-03-23
- 发明人: Glen A. Slack , Leo J. Schowalter
- 申请人： Glen A. Slack , Leo J. Schowalter
- 主分类号： H01L29/207
- IPC分类号： H01L29/207 ; H01L21/02 ; H01L21/225 ; H01L29/20
摘要：
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
公开/授权文献
- US10068973B2 Doped aluminum nitride crystals and methods of making them 公开/授权日：2018-09-04
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