Invention Application
- Patent Title: POWER AMPLIFICATION MODULE
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Application No.: US15364690Application Date: 2016-11-30
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Publication No.: US20170085232A1Publication Date: 2017-03-23
- Inventor: Masatoshi HASE
- Applicant: Murata Manufacturing Co., Ltd.
- Priority: JP2015-093192 20150430
- Main IPC: H03F3/19
- IPC: H03F3/19 ; H03F3/24

Abstract:
A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.
Public/Granted literature
- US10050647B2 Power amplification module Public/Granted day:2018-08-14
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