Invention Application
- Patent Title: HIGH OVER-PRESSURE CAPABLE SILICON DIE PRESSURE SENSOR WITH EXTENDED PRESSURE SIGNAL OUTPUT
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Application No.: US14868901Application Date: 2015-09-29
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Publication No.: US20170089786A1Publication Date: 2017-03-30
- Inventor: Charles Ray Willcox , Jennifer Ann Blodgett , Mark George Romo
- Applicant: Rosemount Inc.
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
A pressure sensor includes a base having a high-pressure contact portion, and a diaphragm positioned over the base and having an external top surface opposite the base. The external top surface is defined within a closed perimeter and external side surfaces extend down from an entirety of the closed perimeter toward the base. A high-pressure contact portion of the diaphragm is aligned with and separated by a gap from the high-pressure contact portion of the base. A sensing element is coupled to the diaphragm and provides an output based on changes to the diaphragm. When a hydrostatic pressure load above a threshold value is applied to the entire external top surface and external side surfaces of the diaphragm, the hydrostatic pressure load causes the high-pressure contact portion of the diaphragm to contact the high-pressure contact portion of the base.
Public/Granted literature
- US09719872B2 High over-pressure capable silicon die pressure sensor with extended pressure signal output Public/Granted day:2017-08-01
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