Invention Application
- Patent Title: PREVENTION OF PREMATURE BREAKDOWN OF INTERLINE POROUS DIELECTRICS IN AN INTEGRATED CIRCUIT
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Application No.: US15137063Application Date: 2016-04-25
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Publication No.: US20170098615A1Publication Date: 2017-04-06
- Inventor: Christian Rivero , Pascal Fornara , Jean-Philippe Escales
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Priority: FR1559337 20151001
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L21/02
Abstract:
A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion of an integrated circuit. This non-porous dielectric barrier protects the integrated circuit from breakdown of the least one dielectric region caused by electrical conduction assisted by the presence of defects located in the at least one dielectric region.
Public/Granted literature
- US09812399B2 Prevention of premature breakdown of interline porous dielectrics in an integrated circuit Public/Granted day:2017-11-07
Information query
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