Invention Application
- Patent Title: Manufacturing Method of Non-Planar FET
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Application No.: US15379486Application Date: 2016-12-15
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Publication No.: US20170098710A1Publication Date: 2017-04-06
- Inventor: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Chia-Lin Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/66
Abstract:
The present invention provides a non-planar FET and a method of manufacturing the same. The non-planar FET includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET.
Public/Granted literature
- US09923095B2 Manufacturing method of non-planar FET Public/Granted day:2018-03-20
Information query
IPC分类:
