- 专利标题： Contact Structure of Gate Structure
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申请号： US15384446申请日： 2016-12-20
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公开(公告)号： US20170103918A1公开(公告)日： 2017-04-13
- 发明人: Audrey Hsiao-Chiu Hsu , Fu-Kai Yang , Mei-Yun Wang , Hsien-Cheng Wang , Shih-Wen Liu , Hsin-Ying Lin
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532 ; H01L21/285 ; H01L23/535
摘要：
A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.
公开/授权文献
- US10276437B2 Contact structure of gate structure 公开/授权日：2019-04-30
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