- 专利标题： LOW TEMPERATURE FABRICATION OF LATERAL THIN FILM VARISTOR
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申请号： US15386256申请日： 2016-12-21
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公开(公告)号： US20170104054A1公开(公告)日： 2017-04-13
- 发明人: Jeffrey P. Gambino , Richard S. Graf , Sudeep Mandal
- 申请人： International Business Machines Corporation
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L21/762 ; H01L23/522 ; H01L23/528 ; H01L23/62 ; H01C17/12 ; H01L27/02 ; H01L29/06 ; H01C7/10 ; H01C7/112 ; H01C17/00 ; H01C7/12 ; H01L21/02 ; H01L23/64
摘要：
A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
公开/授权文献
- US09865674B2 Low temperature fabrication of lateral thin film varistor 公开/授权日：2018-01-09