Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a−1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and each L′ is independently NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.