公开(公告)号：US20170107618A1

公开(公告)日：2017-04-20

申请号：US15396203

申请日：2016-12-30

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Satoko GATINEAU ,  Wontae NOH ,  Daehyeon KIM ,  Julien GATINEAU ,  Jean-Marc GIRARD

IPC分类号： C23C16/455 ,  C23C16/06 ,  C23C16/50 ,  C04B35/622 ,  C07F17/00

CPC分类号： C23C16/50 ,  C04B35/62218 ,  C04B2235/48 ,  C07F7/003 ,  C07F17/00 ,  C23C16/405 ,  C23C16/4481 ,  C23C16/45553

摘要： Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and L′ is NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

公开(公告)号：US20180202042A1

公开(公告)日：2018-07-19

申请号：US15742658

申请日：2016-07-08

申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AMERICAN AIR LIQUIDE, INC.

发明人： Claudia FAFARD ,  Glenn KUCHENBEISER ,  Venkateswara R. PALLEM ,  Jean-Marc GIRARD ,  Naoto NODA

IPC分类号： C23C16/42 ,  C23C16/455 ,  C07F7/10

CPC分类号： C23C16/42 ,  C07F7/10 ,  C23C16/30 ,  C23C16/45553

摘要： Disclosed are Si-containing film forming compositions comprising alkylamino-substituted halocarbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

公开(公告)号：US20180187303A1

公开(公告)日：2018-07-05

申请号：US15396221

申请日：2016-12-30

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Satoko GATINEAU ,  Daehyeon KIM ,  Wontae NOH ,  Jean-Marc GIRARD

IPC分类号： C23C16/18 ,  C07F5/00 ,  C23C16/455

CPC分类号： C23C16/18 ,  C07F5/00 ,  C23C16/45553

摘要： Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n>1; each R is independently an H or a C1-C4 hydrocarbyl group; L is a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is an H or a C1-C4 hydrocarbon group; and L′ is NR″ or O, wherein R″ is an H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

公开(公告)号：US20170107623A1

公开(公告)日：2017-04-20

申请号：US15396159

申请日：2016-12-30

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Daehyeon KIM ,  Satoko GATINEAU ,  Wontae NOH ,  Julien GATINEAU ,  Jean-Marc GIRARD

IPC分类号： C23C16/513 ,  C23C16/455 ,  C07F7/00

CPC分类号： C07F7/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/45525

摘要： Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an η5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group and adjacent R's may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

公开(公告)号：US20210189146A1

公开(公告)日：2021-06-24

申请号：US16723771

申请日：2019-12-20

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Wontae NOH ,  Jooho LEE ,  Jean-Marc GIRARD

IPC分类号： C09D1/00 ,  C01F7/30 ,  C07F5/06 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/40

摘要： Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula: LxM(—N(R)—(CR′2)n—NR″2) wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R″ each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R′ is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4, wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.

公开(公告)号：US20200032397A1

公开(公告)日：2020-01-30

申请号：US16587596

申请日：2019-09-30

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Satoko GATINEAU ,  Daehyeon KIM ,  Wontae NOH ,  Julien GATINEAU ,  Jean-Marc GIRARD

IPC分类号： C23C16/50 ,  C23C16/448 ,  C23C16/455 ,  C23C16/40 ,  C07F7/00 ,  C07F17/00

摘要： Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; p>1; each R is independently hydrogen or a C1-C4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and each L′ is independently NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

公开(公告)号：US20170107617A1

公开(公告)日：2017-04-20

申请号：US15396183

申请日：2016-12-30

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Satoko GATINEAU ,  Daehyeon KIM ,  Wontae NOH ,  Julien GATINEAU ,  Jean-Marc GIRARD

IPC分类号： C23C16/455 ,  C23C16/06 ,  C23C16/50 ,  C04B35/622 ,  C07F17/00

摘要： Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a−1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and each L′ is independently NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

公开(公告)号：US20160010204A1

公开(公告)日：2016-01-14

申请号：US14765090

申请日：2014-01-31

申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE

发明人： Satoko GATINEAU ,  Changhee KO ,  Jean-Marc GIRARD ,  Julien GATINEAU

IPC分类号： C23C16/06 ,  C23C16/455 ,  C23C16/28 ,  C23C16/40 ,  C23C16/34 ,  C23C16/42

CPC分类号： C23C16/06 ,  C07F15/06 ,  C23C16/18 ,  C23C16/28 ,  C23C16/34 ,  C23C16/40 ,  C23C16/406 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76841

摘要： Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1≠R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.

摘要翻译： 公开了含钴化合物，它们的合成及其用于沉积含钴膜的用途。 所公开的含钴化合物具有下式之一：其中R1，R2，R3，R4和R5各自独立地选自氢和直链，环状或支链烃基; （a）当R 1和R 2和R 3为烃基时，R 1≠R 2和/或R 3; （b）当R 3为H时，R 1和R 2为烃基; 或（c）当R 2和R 3为H时，R 1为C 2 -C 4烃基。

公开(公告)号：US20200149165A1

公开(公告)日：2020-05-14

申请号：US16745631

申请日：2020-01-17

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Wontae NOH ,  Daehyeon KIM ,  Satoko GATINEAU ,  Jean-Marc GIRARD

IPC分类号： C23C16/455 ,  C07F17/00 ,  C23C16/448

摘要： Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4—[(ER2)m-(ER2)n—O]—, wherein M is Ti, Zr, or Hf bonded in an η5 bonding mode to the cyclopentadienyl group; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a hydrogen or a C1-C4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is H or a C1-C4 hydrocarbon group; and adjacent R's may be joined to form a hydrocarbyl ring. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on the substrates via vapor deposition processes.

公开(公告)号：US20200149156A1

公开(公告)日：2020-05-14

申请号：US16747129

申请日：2020-01-20

申请人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

发明人： Satoko GATINEAU ,  Daehyeon KIM ,  Wontae NOH ,  Jean-Marc GIRARD

IPC分类号： C23C16/18 ,  C23C16/455 ,  C07F5/00

摘要： Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n>1; each R is independently an H or a C1-C4 hydrocarbyl group; L is a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is an H or a C1-C4 hydrocarbon group; and L′ is NR″ or O, wherein R″ is an H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.