Invention Application
- Patent Title: 1-SELECTOR N-RESISTOR MEMRISTIVE DEVICES
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Application No.: US15128244Application Date: 2014-04-10
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Publication No.: US20170110515A1Publication Date: 2017-04-20
- Inventor: Jianhua Yang , Gary Gibson , Zhiyong Li
- Applicant: Hewlett Packard Enterprise Development LP
- International Application: PCT/US2014/033583 WO 20140410
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C13/00 ; H01L45/00

Abstract:
A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.
Public/Granted literature
- US09911789B2 1-Selector n-Resistor memristive devices Public/Granted day:2018-03-06
Information query
IPC分类: