Invention Application
- Patent Title: METHOD INCLUDING A FORMATION OF A DIFFUSION BARRIER AND SEMICONDUCTOR STRUCTURE INCLUDING A DIFFUSION BARRIER
-
Application No.: US15257245Application Date: 2016-09-06
-
Publication No.: US20170117179A1Publication Date: 2017-04-27
- Inventor: Frank Koschinsky , Bernd Hintze , Heiko Weber
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532
Abstract:
A method includes forming a diffusion barrier over a semiconductor structure. The formation of the diffusion barrier includes performing a first tantalum deposition process, the first tantalum deposition process forming a first tantalum layer over the semiconductor structure, performing a treatment of the first tantalum layer, and performing a second tantalum deposition process after the treatment of the first tantalum layer. The treatment modifies at least a portion of the first tantalum layer. The second tantalum deposition process forms a second tantalum layer over the first tantalum layer.
Public/Granted literature
Information query
IPC分类:
