Invention Application
- Patent Title: SYSTEM AND METHOD FOR GAS-PHASE PASSIVATION OF A SEMICONDUCTOR SURFACE
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Application No.: US15397237Application Date: 2017-01-03
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Publication No.: US20170117202A1Publication Date: 2017-04-27
- Inventor: Fu Tang , Michael E. Givens , Qi Xie , Xiaoqiang Jiang , Petri Raisanen , Pauline Calka
- Applicant: ASM IP Holding B.V.
- Main IPC: H01L23/31
- IPC: H01L23/31 ; C23C16/40 ; C23C16/455 ; H01L21/02 ; H01L23/29
Abstract:
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.
Public/Granted literature
- US09911676B2 System and method for gas-phase passivation of a semiconductor surface Public/Granted day:2018-03-06
Information query
IPC分类:
