- 专利标题： Sputtering Target Comprising Ni-P Alloy or Ni-Pt-P Alloy and Production Method Therefor
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申请号： US15129450申请日： 2015-03-12
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公开(公告)号： US20170121811A1公开(公告)日： 2017-05-04
- 发明人: Kazumasa Ohashi , Kunihiro Oda
- 申请人： JX Nippon Mining & Metals Corporation
- 优先权： JP2014-067132 20140327; JP2014-068680 20140328
- 国际申请： PCT/JP2015/057265 WO 20150312
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; B22F3/15 ; B22F5/00 ; G11B5/851 ; C23C14/14 ; H01J37/34 ; G11B5/64 ; B22F9/08 ; C22C19/03
摘要：
A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 μm or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.
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