发明申请
- 专利标题: THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES INCLUDING A VERTICAL CHANNEL
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申请号: US15403440申请日: 2017-01-11
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公开(公告)号: US20170125522A1公开(公告)日: 2017-05-04
- 发明人: Jaesung SIM , Youngwoo Park
- 申请人: Jaesung SIM , Youngwoo Park
- 优先权: KR10-2014-0047447 20140421
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L27/11582 ; H01L29/04 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/788 ; H01L27/11556 ; H01L29/267
摘要:
Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.