- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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申请号： US15399755申请日： 2017-01-06
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公开(公告)号： US20170125579A1公开(公告)日： 2017-05-04
- 发明人: Chien-Ting Lin
- 申请人： UNITED MICROELECTRONICS CORP.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/06
摘要：
A semiconductor device includes: a substrate having a first fin-shaped structure and a second fin-shaped structure thereon, a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure, a gate isolation directly on the second fin-shaped structure, and a gate line on the STI and the first fin-shaped structure. Preferably, the gate line includes a L-shaped structure.
公开/授权文献
- US09799769B2 Semiconductor device and method for fabricating the same 公开/授权日：2017-10-24
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