Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines 11 and a plurality of data lines 12. The imaging panel includes, in each of the pixels 13, a conversion element 15 that converts scintillation light to electric charge, and a thin film transistor 14 connected to the gate line 11, data line 12, and conversion element 15. A drain electrode 144 of the thin film transistor 14 is formed such that edges 144E1 and 144E2 of the drain electrode 144 near the data line 12 are more inside the pixel 13 than edges 15E1 and 15E2 of the conversion element 15 near the data line 12.