Systems and methods for low latency acquisition of soft data from a memory cell based on a sensing time and/or a leakage current are described. In one embodiment, the systems and methods may include applying a first read voltage to a word line of a page of memory cells selected by a processor of a flash memory device for a read operation, applying a pass voltage to word lines associated with one or more different pages of memory cells of the memory block, upon applying the first read voltage sensing whether a bit line of a memory cell in the selected page conducts, measuring a side effect associated with sensing whether the bit line of the memory cell in the selected page conducts, and assigning a LLR value to the memory cell as a soft LDPC input based at least in part on the measured side effect.