- 专利标题: HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
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申请号: US15156979申请日: 2016-05-17
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公开(公告)号: US20170133481A1公开(公告)日: 2017-05-11
- 发明人: Isik C. Kizilyalli , Dave P. Bour , Thomas R. Prunty , Gangfeng Ye
- 申请人: Avogy, Inc.
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/02 ; H01L29/06 ; H01L29/04 ; H01L29/861 ; H01L29/20
摘要:
A method of fabricating an electronic device includes providing a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the direction of between 0.15° and 0.65°. The method also includes growing a first III-V epitaxial layer coupled to the III-V substrate and growing a second III-V epitaxial layer coupled to the first III-V epitaxial layer. The method further includes forming a first contact in electrical contact with the III-V substrate and forming a second contact in electrical contact with the second III-V epitaxial layer.