- 专利标题: BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS
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申请号: US15419754申请日: 2017-01-30
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公开(公告)号: US20170141255A1公开(公告)日: 2017-05-18
- 发明人: Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Perine Jaffrennou , Nada Habka , Sergej Filonovich
- 申请人: Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Perine Jaffrennou , Nada Habka , Sergej Filonovich
- 主分类号: H01L31/068
- IPC分类号: H01L31/068 ; H01L31/0368 ; H01L31/0236 ; H01L31/02 ; H01L31/0216
摘要:
Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
公开/授权文献
- US10516071B2 Blister-free polycrystalline silicon for solar cells 公开/授权日:2019-12-24
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