Invention Application
- Patent Title: METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE
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Application No.: US15403131Application Date: 2017-01-10
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Publication No.: US20170148825A1Publication Date: 2017-05-25
- Inventor: Chuanzhi Xu , Zhengfang Xie , Xiongping Li , Xiaoyang Tong
- Applicant: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD. , TIANMA MICRO-ELECTRONICS CO., LTD.
- Applicant Address: CN Shanghai CN Shenzhen
- Assignee: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.,TIANMA MICRO-ELECTRONICS CO., LTD.
- Current Assignee: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.,TIANMA MICRO-ELECTRONICS CO., LTD.
- Current Assignee Address: CN Shanghai CN Shenzhen
- Priority: CN201610848316.5 20160923
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/441 ; H01L29/423 ; G02F1/1368 ; H01L29/66 ; H01L29/786 ; G02F1/1343 ; H01L21/467 ; H01L29/24

Abstract:
A method for manufacturing an array substrate, and an array substrate, a display panel and a display device are provided. The method may include: forming, on one side of a substrate, a gate electrode layer, a gate insulation layer and a semiconductor layer, wherein the gate electrode layer has a same pattern as the semiconductor layer; forming an etching stop layer on the semiconductor layer; forming a first, second hole and third through holes by patterning the etching stop layer; forming a source electrode layer and a drain electrode layer on the etching stop layer, wherein the source electrode layer is electrically connected with the semiconductor layer via the first through hole, and the drain electrode layer is electrically connected with the semiconductor layer via the second through hole; forming an active layer by etching the semiconductor layer at the location corresponding to the third through hole.
Public/Granted literature
- US10056410B2 Method for manufacturing array substrate, and array substrate, display panel and display device Public/Granted day:2018-08-21
Information query
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