Invention Application
- Patent Title: METHOD FOR FORMING A STRAINED SEMICONDUCTOR LAYER INCLUDING REPLACING AN ETCHABLE MATERIAL FORMED UNDER THE STRAINED SEMICONDUCTOR LAYER WITH A DIELECTRIC LAYER
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Application No.: US15258144Application Date: 2016-09-07
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Publication No.: US20170154775A1Publication Date: 2017-06-01
- Inventor: KARTHIK BALAKRISHNAN , KANGGUO CHENG , POUYA HASHEMI , ALEXANDER REZNICEK
- Applicant: International Business Machines Corporation
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105 ; H01L21/324 ; H01L21/3065 ; H01L21/308
Abstract:
A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.
Public/Granted literature
Information query
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