- 专利标题： SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
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申请号： US14957570申请日： 2015-12-02
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公开(公告)号： US20170162689A1公开(公告)日： 2017-06-08
- 发明人: Jun Hu , Zhiyun LUO , Fei WANG , Mengyu PAN
- 申请人： Jun Hu , Zhiyun LUO , Fei WANG , Mengyu PAN
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/3213 ; H01L29/40 ; H01L29/66 ; H01L29/10
摘要：
A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.
公开/授权文献
- US10038089B2 SGT MOSFET with adjustable CRSS and CISS 公开/授权日：2018-07-31
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