- 专利标题: MASK BLANK, PHASE-SHIFT MASK, METHOD OF MANUFACTURING MASK BLANK, METHOD OF MANUFACTURING PHASE-SHIFT MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号: US15454199申请日: 2017-03-09
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公开(公告)号: US20170176848A1公开(公告)日: 2017-06-22
- 发明人: Hiroaki SHISHIDO , Kazuya SAKAI
- 申请人: HOYA CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2013-004370 20130115; JP2013-046721 20130308; JP2013-112549 20130529
- 主分类号: G03F1/32
- IPC分类号: G03F1/32 ; H01L21/027 ; G03F7/20
摘要:
Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.