公开(公告)号：US20190146327A1

公开(公告)日：2019-05-16

申请号：US16201344

申请日：2018-11-27

申请人： HOYA CORPORATION

发明人： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC分类号： G03F1/32 ,  H01L21/027 ,  G03F1/26 ,  G03F7/20

摘要： Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

公开(公告)号：US20200064727A1

公开(公告)日：2020-02-27

申请号：US16671065

申请日：2019-10-31

申请人： HOYA CORPORATION

发明人： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC分类号： G03F1/32 ,  H01L21/027 ,  G03F7/20 ,  G03F1/26

摘要： A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.

公开(公告)号：US20130236819A1

公开(公告)日：2013-09-12

申请号：US13871582

申请日：2013-04-26

申请人： HOYA CORPORATION

发明人： Kazuya SAKAI ,  Masaru TANABE

IPC分类号： G03F1/50

CPC分类号： G03F1/50 ,  G03F1/82

摘要： Provided is a thin film evaluation method for a transfer mask which is adapted to be applied with ArF excimer laser exposure light and comprises a thin film formed with a pattern on a transparent substrate. The method includes intermittently irradiating pulsed laser light onto the thin film to thereby evaluate the irradiation durability of the thin film.

摘要翻译： 本发明提供一种转印掩模的薄膜评价方法，其适用于应用ArF准分子激光曝光光，并且包括在透明基板上形成有图案的薄膜。 该方法包括将脉冲激光间歇地照射到薄膜上，从而评价薄膜的照射耐久性。

公开(公告)号：US20150338731A1

公开(公告)日：2015-11-26

申请号：US14760911

申请日：2014-01-14

申请人： HOYA CORPORATION

发明人： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC分类号： G03F1/26

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2006 ,  H01L21/0275

摘要： Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

摘要翻译： 提供了一种掩模坯料，其中相移膜在面内方向和膜厚度方面的组成和光学特性的均匀性高，组成的均匀性和相移膜在多个之间的光学特性 的基板也很高，即使将硅基材料施加到形成相移膜的材料上，故障率也低。 提供了一种掩模板，其中相移膜设置在透明基板上，相移膜具有以预定透射率透射ArF曝光光的功能，并在ArF曝光光中产生预定量的相移 其中相移膜包括其中层叠低透射层和高透射层的结构，低透射层和高透射层由由硅和氮组成的材料或材料形成 由硅，氮和选自半金属元素，非金属元素和惰性气体中的一种或多种元素组成，低透射层与高透射率层相比具有相对低的氮含量。

公开(公告)号：US20150261083A1

公开(公告)日：2015-09-17

申请号：US14729164

申请日：2015-06-03

申请人： HOYA CORPORATION

发明人： Kazuya SAKAI ,  Ryo OHKUBO ,  Osamu NOZAWA ,  Toshiyuki SUZUKI

IPC分类号： G03F1/24 ,  G03F1/80

CPC分类号： G03F1/24 ,  G03F1/58 ,  G03F1/80

摘要： The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

摘要翻译： 本发明是用于制造反射掩模的反射掩模坯料，其在基板上依次具有多层反射膜，吸收膜和蚀刻掩模膜的层叠结构，其中蚀刻掩模膜包括含有 铬，吸收膜包含含有钽的材料，在与基板相反的一侧的吸收膜的表面层上形成高度氧化层，并且通过X射线分析时形成高度氧化层的Ta 4f窄谱 光电子能谱具有超过23eV的结合能的最大峰值。

公开(公告)号：US20130078554A1

公开(公告)日：2013-03-28

申请号：US13628790

申请日：2012-09-27

申请人： HOYA CORPORATION

发明人： Kazuya SAKAI ,  Ryo OHKUBO ,  Osamu NOZAWA ,  Toshiyuki SUZUKI

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  G03F1/58 ,  G03F1/80

摘要： The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

公开(公告)号：US20170176848A1

公开(公告)日：2017-06-22

申请号：US15454199

申请日：2017-03-09

申请人： HOYA CORPORATION

发明人： Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC分类号： G03F1/32 ,  H01L21/027 ,  G03F7/20

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2006 ,  H01L21/0275

摘要： Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

公开(公告)号：US20150286132A1

公开(公告)日：2015-10-08

申请号：US14743052

申请日：2015-06-18

申请人： HOYA CORPORATION

发明人： Kazuya SAKAI ,  Masahiro HASHIMOTO

IPC分类号： G03F1/50

CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/82 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3213 ,  H01L21/32136

摘要： Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

摘要翻译： 提供了一种制造掩模坯料的方法，该掩模坯料具有改进的耐臭氧清洁等的清洁性能，因此能够防止由于清洁而引起的掩模性能的劣化。 该方法用于制造掩模坯料，其在基板上具有在其表面形成有由含有过渡金属的材料制成的抗反射层的薄膜，并进行使高浓度的臭氧气体与 浓度为50〜100体积％，从而形成表面改性层，该表面改性层包含在抗反射层的表面含有过渡金属的氧化物的强氧化物膜。

公开(公告)号：US20150168823A1

公开(公告)日：2015-06-18

申请号：US14627426

申请日：2015-02-20

申请人： HOYA CORPORATION

发明人： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC分类号： G03F1/32 ,  G03F1/26

CPC分类号： G03F1/32 ,  B82Y30/00 ,  C23C14/0036 ,  C23C14/0641 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2041 ,  Y10S977/755

摘要： Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

摘要翻译： 提供一种相位移掩模坯料，其将由主要包含过渡金属，硅和氮的材料制成的光半透射膜（相移膜）的照射耐久性提高到具有200nm波长的曝光光 或更小，从而可以改善掩模寿命，制造这种相移掩模坯料的方法和相移掩模。 相移掩模空白用于制造适于施加ArF受激准分子激光曝光光的相移掩模。 相移掩模空白在透明基板上具有轻半透射膜。 轻半透射膜是主要包含过渡金属，硅和氮的不完全氮化物膜。 过渡金属与过渡金属和轻半透射膜中的硅的含量比小于9％。

公开(公告)号：US20130078553A1

公开(公告)日：2013-03-28

申请号：US13628552

申请日：2012-09-27

申请人： HOYA CORPORATION

发明人： Kazuya SAKAI ,  Ryo OHKUBO ,  Osamu NOZAWA ,  Toshiyuki SUZUKI

IPC分类号： G03F1/50 ,  G03F7/20

CPC分类号： G03F1/58 ,  G03F1/50 ,  G03F1/80

摘要： The present invention is a mask blank used to fabricate a transfer mask, which has a laminated structure of a light shielding film and an etching mask film in this order on a transparent substrate, wherein the etching mask film comprises a material containing chromium, the light shielding film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the light shielding film on the opposite side from the transparent substrate, and a Ta 4 f narrow spectrum of the highly oxidized layer analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

摘要翻译： 本发明是用于在透明基板上依次制造具有遮光膜和蚀刻掩模膜的层叠结构的转印掩模的掩模坯料，其中蚀刻掩模膜包括含铬的材料，光 屏蔽膜包括含有钽的材料，在与透明基板相反的一侧的遮光膜的表面层上形成高度氧化层，并且通过X射线光电子分析的高氧化层的Ta 4 f窄谱 光谱学具有大于23eV的结合能的最大峰。