The present disclosure relates to nitride based optoelectronic and electronic devices with Si CMOS. The disclosure provides a semiconductor device, comprising a sapphire substrate, and a laser region and a detector region deposed on the sapphire substrate. The laser is formed onto the substrate from layers of GaN, InGaN and optionally the AlGaN. The detector can be an InGaN detector. A waveguide may be interposed between the laser and detector regions coupling these regions. The semiconductor device allows integration of nitride base optoelectronic and electronic devices with Si CMOS. The disclosure also provides a method for making the semiconductor devices.