Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
-
Application No.: US15372876Application Date: 2016-12-08
-
Publication No.: US20170186746A1Publication Date: 2017-06-29
- Inventor: Wonkeun Chung , Gigwan Park , Huyong Lee , TaekSoo Jeon , Sangjin Hyun
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR1020150188734 20151229
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/423 ; H01L29/06
Abstract:
A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.
Public/Granted literature
- US10043803B2 Semiconductor device having gate electrodes with stacked metal layers Public/Granted day:2018-08-07
Information query
IPC分类:
