Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US15384602Application Date: 2016-12-20
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Publication No.: US20170186763A1Publication Date: 2017-06-29
- Inventor: Tatsuyoshi MIHARA
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2015-255923 20151228
- Main IPC: H01L27/11568
- IPC: H01L27/11568 ; H01L29/792 ; H01L29/423
Abstract:
A fin includes a first region and a second region arranged on a positive side in an X-axis direction with respect to the first region. A control gate electrode covers an upper surface of the first region, and a side surface of the first region on the positive side in a Y-axis direction. A memory gate electrode covers an upper surface of the second region, and a side surface of the second region on the positive side in the Y-axis direction. The upper surface of the second region is lower than the upper surface of the first region. The side surface of the second region is arranged on the negative side in the Y-axis direction with respect to the side surface of the first region in the Y-axis direction.
Public/Granted literature
- US09735169B2 Semiconductor device and manufacturing method thereof Public/Granted day:2017-08-15
Information query
IPC分类:
