- 专利标题： CONTROLLED CONFINED LATERAL III-V EPITAXY
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申请号： US15237114申请日： 2016-08-15
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公开(公告)号： US20170194145A1公开(公告)日： 2017-07-06
- 发明人: Karthik Balakrishnan , Lukas Czornomaz , Pouya Hashemi , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/306 ; H01L21/322 ; H01L21/84 ; H01L21/311
摘要：
After forming a seed layer over a first end of a sacrificial semiconductor layer composed of silicon germanium, a remaining portion of the sacrificial semiconductor layer is removed to provide a trench. Next, a semiconductor barrier layer is formed on a sidewall of the seed layer that is exposed by the trench. A III-V compound semiconductor layer is formed within the trench by a lateral epitaxial semiconductor regrowth process.
公开/授权文献
- US09748098B2 Controlled confined lateral III-V epitaxy 公开/授权日：2017-08-29
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