A method of manufacturing a semiconductor device including: (a) forming a first insulation film on a semiconductor substrate; (b) forming a first coil on the first insulation film; (c) forming a second insulation film on the first insulation film so as to cover the first coil; (d) forming a first pad on the second insulation film at a position not overlapped with the first coil in a planar view; (e) forming a laminated insulation film on the second insulation film, the laminated insulation film having a first opening from which the first pad is exposed; and (f) forming a second coil and a first wiring on the laminated insulation film, wherein the second coil is disposed above the first coil, the first coil and the second coil are not connected by a conductor but magnetically coupled to each other, the first wiring is formed from an upper portion of the first pad to an upper portion of the laminated insulation film and is electrically connected to the first pad, and the laminated insulation film includes a silicon oxide film, a silicon nitride film on the silicon oxide film, and a resin film on the silicon nitride film.