A method of providing on-chip capacitance includes providing a starting interconnect structure for semiconductor device(s), the starting interconnect structure including a layer of dielectric material. Vias of a same cross-sectional shape are formed in the layer of dielectric material having different and successive geometric cross-sectional size, and capacitors matching the via shape are formed in the vias. The geometric cross-sectional shapes include circles, squares, hexagons and octagons. For the non-circle shapes, a capacitance thereof is approximated by the capacitance of a coaxial capacitor fitting within and touching all sides of the non-circle shape multiplied by a correction factor of about 0.01 to about 2.