Invention Application
- Patent Title: NICKEL COMPOUND AND METHOD OF FORMING THIN FILM USING THE NICKEL COMPOUND
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Application No.: US15468276Application Date: 2017-03-24
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Publication No.: US20170198001A1Publication Date: 2017-07-13
- Inventor: Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Adeka Corporation
- Current Assignee: Adeka Corporation
- Current Assignee Address: JP Tokyo
- Priority: KR10-2014-0032161 20140319
- Main IPC: C07F15/04
- IPC: C07F15/04 ; H01L21/285 ; C23C16/455 ; C09D1/00 ; C23C16/06
Abstract:
Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
Public/Granted literature
- US09790246B2 Nickel compound and method of forming thin film using the nickel compound Public/Granted day:2017-10-17
Information query
