- 专利标题： IMPLANT AFTER THROUGH-SILICON VIA (TSV) ETCH TO GETTER MOBILE IONS
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申请号： US14994598申请日： 2016-01-13
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公开(公告)号： US20170200620A1公开(公告)日： 2017-07-13
- 发明人: Christopher Collins , Mukta G. Farooq , Troy L. Graves-Abe , Brian J. Greene , Robert Hannon , Herbert L. Ho , Chandrasekharan Kothandaraman
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; H01L21/308 ; H01L23/532 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L29/167
摘要：
A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench.
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