公开(公告)号：US20170200620A1

公开(公告)日：2017-07-13

申请号：US14994598

申请日：2016-01-13

申请人： International Business Machines Corporation

发明人： Christopher Collins ,  Mukta G. Farooq ,  Troy L. Graves-Abe ,  Brian J. Greene ,  Robert Hannon ,  Herbert L. Ho ,  Chandrasekharan Kothandaraman

IPC分类号： H01L21/322 ,  H01L21/308 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L29/167

CPC分类号： H01L21/3226 ,  H01L21/26586 ,  H01L21/308 ,  H01L21/743 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257 ,  H01L29/167

摘要： A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench.

公开(公告)号：US20150069608A1

公开(公告)日：2015-03-12

申请号：US14023980

申请日：2013-09-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Christopher Collins ,  Troy Lawrence Graves-Abe ,  Mukta G. Farooq ,  Tze-man Ko ,  William Francis Landers ,  Youbo Lin ,  Son Van Nguyen ,  Jennifer Ann Oakley ,  Deepika Priyadarshini

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L23/5226 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved through-silicon via (TSV) and method of fabrication are disclosed. A back-end-of-line (BEOL) stack is formed on a semiconductor substrate. A TSV cavity is formed in the BEOL stack and semiconductor substrate. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.

摘要翻译： 公开了一种改进的通硅通孔（TSV）和制造方法。 在半导体衬底上形成后端（BEOL）堆叠。 在BEOL堆叠和半导体衬底中形成TSV腔。 共形保护层沿着BEOL堆叠放置在TSV腔的内表面上，并且一部分设置在半导体衬底中。 共形保护层用于在后续处理期间保护BEOL堆叠内的电介质层，从而提高集成电路质量和产品产量。

公开(公告)号：US10170337B2

公开(公告)日：2019-01-01

申请号：US14994598

申请日：2016-01-13

申请人： International Business Machines Corporation

发明人： Christopher Collins ,  Mukta G. Farooq ,  Troy L. Graves-Abe ,  Brian J. Greene ,  Robert Hannon ,  Herbert L. Ho ,  Chandrasekharan Kothandaraman

IPC分类号： H01L21/322 ,  H01L21/768 ,  H01L21/308 ,  H01L29/167 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/265

摘要： A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench.

公开(公告)号：US20150097274A1

公开(公告)日：2015-04-09

申请号：US14571368

申请日：2014-12-16

申请人： International Business Machines Corporation

发明人： Christopher Collins ,  Mukta G. Farooq ,  Troy Lawrence Graves-Abe ,  Tze-Man Ko ,  William Francis Landers ,  Youbo Lin ,  Son Van Nguyen ,  Jennifer Ann Oakley ,  Deepika Priyadarshini

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved through-silicon via (TSV) is disclosed. A semiconductor substrate has a a back-end-of-line (BEOL) stack formed thereon. The BEOL stack and semiconductor substrate has a TSV cavity formed thereon. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.

摘要翻译： 公开了一种改进的通硅通孔（TSV）。 半导体衬底具有在其上形成的后端（BEOL）叠层。 BEOL堆叠和半导体衬底在其上形成有TSV腔。 共形保护层沿着BEOL堆叠放置在TSV腔的内表面上，并且一部分设置在半导体衬底中。 共形保护层用于在后续处理期间保护BEOL堆叠内的电介质层，从而提高集成电路质量和产品产量。