发明申请
- 专利标题: SEMICONDUCTOR APPARATUS
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申请号: US15364182申请日: 2016-11-29
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公开(公告)号: US20170207618A1公开(公告)日: 2017-07-20
- 发明人: Shigemi MIYAZAWA
- 申请人: FUJI ELECTRIC CO., LTD.
- 优先权: JP2016-006366 20160115
- 主分类号: H02H3/20
- IPC分类号: H02H3/20 ; H01L29/866 ; F02P15/00 ; H01L27/02
摘要:
A semiconductor apparatus can block the voltage from the power source when the voltage from the power source reaches an excessive level, without requiring a larger chip size. Provided is a semiconductor apparatus including a power semiconductor element a gate of which is controlled in response to a control signal, an overvoltage detector configured to detect that a voltage at a collector terminal of the power semiconductor element reaches an overvoltage level, and a block unit configured to, in response to the detection of the overvoltage level, control the gate of the power semiconductor element to transition to an off-voltage. The semiconductor apparatus may further include a reset unit configured to, in response to that the control signal is input that turns on the power semiconductor element, output a reset signal for a predetermined period of time.
公开/授权文献
- US10554037B2 Semiconductor apparatus 公开/授权日:2020-02-04
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