Invention Application
- Patent Title: CHARGED PARTICLE BEAM DEVICE, SIMULATION METHOD, AND SIMULATION DEVICE
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Application No.: US15329638Application Date: 2014-07-28
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Publication No.: US20170213695A1Publication Date: 2017-07-27
- Inventor: Daisuke BIZEN , Makoto SAKAKIBARA , Hiroya OHTA , Junichi TANAKA
- Applicant: HITACHI, LTD.
- Applicant Address: JP Chiyoda-ku, Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Chiyoda-ku, Tokyo
- International Application: PCT/JP2014/069815 WO 20140728
- Main IPC: H01J37/244
- IPC: H01J37/244 ; H01J37/26 ; H01J37/24

Abstract:
A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information (272) in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information (271) which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (272), the sample configuration information (271), and the emission electron number information.
Public/Granted literature
- US09966225B2 Charged particle beam device, simulation method, and simulation device Public/Granted day:2018-05-08
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