- 专利标题： FIN CUT FOR TAPER DEVICE
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申请号： US15483346申请日： 2017-04-10
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公开(公告)号： US20170213741A1公开(公告)日： 2017-07-27
- 发明人: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GlobalFoundries, Inc.
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/306 ; H01L29/66 ; H01L21/02 ; H01L21/3065
摘要：
A method of making a semiconductor device includes patterning a fin in a substrate; performing a first etching process to remove a portion of the fin to cut the fin into a first and second cut fin, the first cut fin having a first and second fin end and the second cut fin having a first and second fin end; forming an oxide layer along an endwall of the first fin end and an endwall of the second fin end of the first cut fin, and an endwall of the first fin end and an endwall of the second fin end of the second cut fin; disposing a liner onto the oxide layer disposed onto the endwall of the first fin end of the first cut fin to form a bilayer liner; and performing a second etching process to remove a portion of the second cut fin.
公开/授权文献
- US09984893B2 Fin cut for taper device 公开/授权日：2018-05-29
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